STMicroelectronics STGW8M120DF3 IGBT, 16 A @ +25°C 1200 V, 3-Pin TO, Through Hole

RS Stock No.: 165-3259Brand: STMicroelectronicsManufacturers Part No.: STGW8M120DF3
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Technical Document

Specifications

Maximum Continuous Collector Current

16 A @ +25°C

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

167 W

Package Type

TO

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

542pF

Maximum Operating Temperature

+175 °C

Energy Rating

1.24mJ

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P.O.A.

STMicroelectronics STGW8M120DF3 IGBT, 16 A @ +25°C 1200 V, 3-Pin TO, Through Hole
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P.O.A.

STMicroelectronics STGW8M120DF3 IGBT, 16 A @ +25°C 1200 V, 3-Pin TO, Through Hole
Stock information temporarily unavailable.
Select packaging type

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Technical Document

Specifications

Maximum Continuous Collector Current

16 A @ +25°C

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

167 W

Package Type

TO

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

542pF

Maximum Operating Temperature

+175 °C

Energy Rating

1.24mJ