Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
140A
Maximum Drain Source Voltage Vds
60V
Series
STripFET F7
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
2mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
125W
Maximum Gate Source Voltage Vgs
20 V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
6.15mm
Standards/Approvals
No
Width
5.2 mm
Automotive Standard
No
Product details
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 16.40
€ 3.28 Each (In a Pack of 5) (Exc. VAT)
€ 19.35
€ 3.87 Each (In a Pack of 5) (inc. VAT)
Standard
5
€ 16.40
€ 3.28 Each (In a Pack of 5) (Exc. VAT)
€ 19.35
€ 3.87 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 5 | € 3.28 | € 16.40 |
| 10+ | € 3.15 | € 15.75 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
140A
Maximum Drain Source Voltage Vds
60V
Series
STripFET F7
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
2mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
125W
Maximum Gate Source Voltage Vgs
20 V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
6.15mm
Standards/Approvals
No
Width
5.2 mm
Automotive Standard
No
Product details
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.


