Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
8.6 A
Maximum Drain Source Voltage
700 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Height
16.4mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 200.00
€ 4.00 Each (In a Tube of 50) (Exc. VAT)
€ 236.00
€ 4.72 Each (In a Tube of 50) (inc. VAT)
50
€ 200.00
€ 4.00 Each (In a Tube of 50) (Exc. VAT)
€ 236.00
€ 4.72 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | € 4.00 | € 200.00 |
100 - 450 | € 3.25 | € 162.50 |
500 - 950 | € 2.93 | € 146.50 |
1000 - 4950 | € 2.52 | € 126.00 |
5000+ | € 2.46 | € 123.00 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
8.6 A
Maximum Drain Source Voltage
700 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Height
16.4mm
Minimum Operating Temperature
-55 °C
Product details