STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 8.6 A, 700 V, 3-Pin TO-220FP STP10NK70ZFP

RS Stock No.: 920-8846Brand: STMicroelectronicsManufacturers Part No.: STP10NK70ZFP
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

8.6 A

Maximum Drain Source Voltage

700 V

Series

MDmesh, SuperMESH

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.6mm

Height

16.4mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

€ 156.00

€ 3.12 Each (In a Tube of 50) (Exc. VAT)

€ 184.08

€ 3.682 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 8.6 A, 700 V, 3-Pin TO-220FP STP10NK70ZFP

€ 156.00

€ 3.12 Each (In a Tube of 50) (Exc. VAT)

€ 184.08

€ 3.682 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 8.6 A, 700 V, 3-Pin TO-220FP STP10NK70ZFP

Stock information temporarily unavailable.

QuantityUnit pricePer Tube
50 - 50€ 3.12€ 156.00
100 - 450€ 2.55€ 127.50
500 - 950€ 2.27€ 113.50
1000 - 4950€ 1.95€ 97.50
5000+€ 1.92€ 96.00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

8.6 A

Maximum Drain Source Voltage

700 V

Series

MDmesh, SuperMESH

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.6mm

Height

16.4mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more