Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Series
DeepGate, STripFET
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
3.2mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
160nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 63.00
€ 6.30 Each (Supplied in a Tube) (Exc. VAT)
€ 74.34
€ 7.434 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
10
€ 63.00
€ 6.30 Each (Supplied in a Tube) (Exc. VAT)
€ 74.34
€ 7.434 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
10
| Quantity | Unit price | Per Tube |
|---|---|---|
| 10 - 18 | € 6.30 | € 12.60 |
| 20 - 48 | € 6.24 | € 12.48 |
| 50 - 98 | € 6.18 | € 12.36 |
| 100+ | € 6.08 | € 12.16 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Series
DeepGate, STripFET
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
3.2mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
160nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


