P-Channel MOSFET, 1.3 A, 30 V, 3-Pin SOT-23 Taiwan Semi TSM2303CX RFG

RS Stock No.: 171-3614Brand: Taiwan SemiconductorManufacturers Part No.: TSM2303CX RFG
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

10 nC @ 4.5 V

Height

1.2mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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P.O.A.

P-Channel MOSFET, 1.3 A, 30 V, 3-Pin SOT-23 Taiwan Semi TSM2303CX RFG

P.O.A.

P-Channel MOSFET, 1.3 A, 30 V, 3-Pin SOT-23 Taiwan Semi TSM2303CX RFG
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

10 nC @ 4.5 V

Height

1.2mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V