Technical Document
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
64 nC @ 10 V
Length
4.85mm
Height
1.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
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Technical Document
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
64 nC @ 10 V
Length
4.85mm
Height
1.37mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V