Texas Instruments NexFET P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP CSD25404Q3T
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
104 A
Maximum Drain Source Voltage
20 V
Series
NexFET
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.15V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
3.4mm
Number of Elements per Chip
1
Length
3.4mm
Typical Gate Charge @ Vgs
10.8 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details
P-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
€ 13.85
€ 2.77 Each (In a Pack of 5) (Exc. VAT)
€ 16.34
€ 3.269 Each (In a Pack of 5) (inc. VAT)
Standard
5
€ 13.85
€ 2.77 Each (In a Pack of 5) (Exc. VAT)
€ 16.34
€ 3.269 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 10 | € 2.77 | € 13.85 |
| 15 - 45 | € 2.24 | € 11.20 |
| 50 - 245 | € 1.99 | € 9.95 |
| 250 - 495 | € 1.77 | € 8.85 |
| 500+ | € 1.61 | € 8.05 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
104 A
Maximum Drain Source Voltage
20 V
Series
NexFET
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.15V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
3.4mm
Number of Elements per Chip
1
Length
3.4mm
Typical Gate Charge @ Vgs
10.8 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details

