Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
120 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
120 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+125 °C
Country of Origin
Japan
Product details
Small Signal NPN Transistors, Toshiba
Bipolar Transistors, Toshiba
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€ 0.36
Each (In a Pack of 25) (Exc. VAT)
€ 0.425
Each (In a Pack of 25) (inc. VAT)
25
€ 0.36
Each (In a Pack of 25) (Exc. VAT)
€ 0.425
Each (In a Pack of 25) (inc. VAT)
25
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
25 - 100 | € 0.36 | € 9.00 |
125 - 225 | € 0.33 | € 8.25 |
250 - 475 | € 0.33 | € 8.25 |
500 - 1225 | € 0.33 | € 8.25 |
1250+ | € 0.33 | € 8.25 |
Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
120 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
120 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+125 °C
Country of Origin
Japan
Product details