Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
263 A
Maximum Drain Source Voltage
60 V
Series
U-MOSVIII-H
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
15.1mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
€ 14.20
€ 2.84 Each (In a Pack of 5) (Exc. VAT)
€ 16.76
€ 3.351 Each (In a Pack of 5) (inc. VAT)
5
€ 14.20
€ 2.84 Each (In a Pack of 5) (Exc. VAT)
€ 16.76
€ 3.351 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
5
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | € 2.84 | € 14.20 |
| 25 - 45 | € 2.59 | € 12.95 |
| 50 - 120 | € 2.40 | € 12.00 |
| 125+ | € 2.27 | € 11.35 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
263 A
Maximum Drain Source Voltage
60 V
Series
U-MOSVIII-H
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
15.1mm
Country of Origin
Japan
Product details


