Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
16 nC @ 10 V
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Height
15.1mm
Country of Origin
Japan
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
€ 52.00
€ 1.04 Each (In a Tube of 50) (Exc. VAT)
€ 61.36
€ 1.227 Each (In a Tube of 50) (inc. VAT)
50
€ 52.00
€ 1.04 Each (In a Tube of 50) (Exc. VAT)
€ 61.36
€ 1.227 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 200 | € 1.04 | € 52.00 |
| 250 - 450 | € 0.95 | € 47.50 |
| 500 - 1200 | € 0.91 | € 45.50 |
| 1250 - 2450 | € 0.88 | € 44.00 |
| 2500+ | € 0.88 | € 44.00 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
16 nC @ 10 V
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Height
15.1mm
Country of Origin
Japan
Product details


