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N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 Toshiba TK31E60X,S1X(S

RS Stock No.: 125-0563Brand: ToshibaManufacturers Part No.: TK31E60X,S1X(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30.8 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

230 W

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Width

4.45mm

Number of Elements per Chip

1

Forward Diode Voltage

1.7V

Height

15.1mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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€ 11.50

€ 5.75 Each (In a Pack of 2) (Exc. VAT)

€ 13.57

€ 6.785 Each (In a Pack of 2) (inc. VAT)

N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 Toshiba TK31E60X,S1X(S

€ 11.50

€ 5.75 Each (In a Pack of 2) (Exc. VAT)

€ 13.57

€ 6.785 Each (In a Pack of 2) (inc. VAT)

N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 Toshiba TK31E60X,S1X(S
Stock information temporarily unavailable.

Buy in bulk

QuantityUnit pricePer Pack
2 - 8€ 5.75€ 11.50
10 - 18€ 4.29€ 8.58
20 - 48€ 4.23€ 8.46
50 - 98€ 4.17€ 8.34
100+€ 4.14€ 8.28

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30.8 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

230 W

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Width

4.45mm

Number of Elements per Chip

1

Forward Diode Voltage

1.7V

Height

15.1mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more