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Toshiba TK N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1

RS Stock No.: 796-5099Brand: ToshibaManufacturers Part No.: TK40E06N1
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

10.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

67 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.1mm

Product details

MOSFET Transistors, Toshiba

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N-channel MOSFET,SUP60N0618 60A 60V
P.O.A.Each (Exc. VAT)
Stock information temporarily unavailable.

€ 9.15

€ 1.83 Each (In a Pack of 5) (Exc. VAT)

€ 10.80

€ 2.159 Each (In a Pack of 5) (inc. VAT)

Toshiba TK N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1
Select packaging type

€ 9.15

€ 1.83 Each (In a Pack of 5) (Exc. VAT)

€ 10.80

€ 2.159 Each (In a Pack of 5) (inc. VAT)

Toshiba TK N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
5 - 45€ 1.83€ 9.15
50 - 120€ 1.70€ 8.50
125 - 245€ 1.64€ 8.20
250 - 495€ 1.51€ 7.55
500+€ 1.42€ 7.10

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-channel MOSFET,SUP60N0618 60A 60V
P.O.A.Each (Exc. VAT)

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

10.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

67 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.1mm

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-channel MOSFET,SUP60N0618 60A 60V
P.O.A.Each (Exc. VAT)