Toshiba TK N-Channel MOSFET, 58 A, 60 V, 3-Pin TO-220SIS TK58A06N1,S4X(S
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
58 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
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€ 6.30
€ 1.26 Each (In a Pack of 5) (Exc. VAT)
€ 7.43
€ 1.487 Each (In a Pack of 5) (inc. VAT)
5
€ 6.30
€ 1.26 Each (In a Pack of 5) (Exc. VAT)
€ 7.43
€ 1.487 Each (In a Pack of 5) (inc. VAT)
5
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| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | € 1.26 | € 6.30 |
| 50 - 95 | € 1.04 | € 5.20 |
| 100 - 245 | € 0.98 | € 4.90 |
| 250 - 495 | € 0.98 | € 4.90 |
| 500+ | € 0.95 | € 4.75 |
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
58 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products