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Toshiba TK N-Channel MOSFET, 72 A, 80 V, 3-Pin TO-220SIS TK72A08N1,S4X(S

RS Stock No.: 896-2439Brand: ToshibaManufacturers Part No.: TK72A08N1,S4X(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

72 A

Maximum Drain Source Voltage

80 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

81 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.5mm

Transistor Material

Si

Height

15mm

Country of Origin

China

Product details

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

€ 9.75

€ 1.95 Each (In a Pack of 5) (Exc. VAT)

€ 11.51

€ 2.301 Each (In a Pack of 5) (inc. VAT)

Toshiba TK N-Channel MOSFET, 72 A, 80 V, 3-Pin TO-220SIS TK72A08N1,S4X(S

€ 9.75

€ 1.95 Each (In a Pack of 5) (Exc. VAT)

€ 11.51

€ 2.301 Each (In a Pack of 5) (inc. VAT)

Toshiba TK N-Channel MOSFET, 72 A, 80 V, 3-Pin TO-220SIS TK72A08N1,S4X(S
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
5 - 20€ 1.95€ 9.75
25 - 95€ 1.73€ 8.65
100 - 245€ 1.54€ 7.70
250 - 495€ 1.51€ 7.55
500+€ 1.48€ 7.40

Ideate. Create. Collaborate

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No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

72 A

Maximum Drain Source Voltage

80 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

81 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.5mm

Transistor Material

Si

Height

15mm

Country of Origin

China

Product details

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more