Toshiba TK N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN TK9J90E
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
900 V
Package Type
TO-3PN
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
15.5mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
46 nC @ 10 V
Number of Elements per Chip
1
Width
4.5mm
Height
20mm
Country of Origin
Japan
Product details
MOSFET N-channel, TK8 & TK9 Series, Toshiba
MOSFET Transistors, Toshiba
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€ 132.50
€ 5.30 Each (In a Tube of 25) (Exc. VAT)
€ 156.35
€ 6.254 Each (In a Tube of 25) (inc. VAT)
25
€ 132.50
€ 5.30 Each (In a Tube of 25) (Exc. VAT)
€ 156.35
€ 6.254 Each (In a Tube of 25) (inc. VAT)
25
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
900 V
Package Type
TO-3PN
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
15.5mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
46 nC @ 10 V
Number of Elements per Chip
1
Width
4.5mm
Height
20mm
Country of Origin
Japan
Product details
MOSFET N-channel, TK8 & TK9 Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products