Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
32 A
Maximum Drain Source Voltage
30 V
Series
U-MOSVIII-H
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
21 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5mm
Length
5mm
Typical Gate Charge @ Vgs
7.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.95mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
€ 7.90
€ 0.79 Each (In a Pack of 10) (Exc. VAT)
€ 9.32
€ 0.932 Each (In a Pack of 10) (inc. VAT)
10
€ 7.90
€ 0.79 Each (In a Pack of 10) (Exc. VAT)
€ 9.32
€ 0.932 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
10
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
32 A
Maximum Drain Source Voltage
30 V
Series
U-MOSVIII-H
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
21 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5mm
Length
5mm
Typical Gate Charge @ Vgs
7.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.95mm
Country of Origin
Japan
Product details


