Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
393 A
Maximum Drain Source Voltage
30 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
890 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Width
5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Forward Diode Voltage
1.2V
Height
0.95mm
Stock information temporarily unavailable.
Please check again later.
P.O.A.
5000
P.O.A.
5000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
393 A
Maximum Drain Source Voltage
30 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
890 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Width
5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Forward Diode Voltage
1.2V
Height
0.95mm