N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON Toshiba TPN14006NH,L1Q(M

RS Stock No.: 171-2206Brand: ToshibaManufacturers Part No.: TPN14006NH,L1Q(M
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

60 V

Package Type

TSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Height

0.85mm

Forward Diode Voltage

1.2V

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€ 0.63

Each (On a Reel of 5000) (Exc. Vat)

€ 0.743

Each (On a Reel of 5000) (Including VAT)

N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON Toshiba TPN14006NH,L1Q(M

€ 0.63

Each (On a Reel of 5000) (Exc. Vat)

€ 0.743

Each (On a Reel of 5000) (Including VAT)

N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON Toshiba TPN14006NH,L1Q(M
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Reel
5000 - 5000€ 0.63€ 3,150.00
10000+€ 0.57€ 2,850.00

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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

60 V

Package Type

TSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Height

0.85mm

Forward Diode Voltage

1.2V