Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
60 V
Package Type
TSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
3.1mm
Length
3.1mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.85mm
€ 3,300.00
€ 0.66 Each (On a Reel of 5000) (Exc. VAT)
€ 3,894.00
€ 0.779 Each (On a Reel of 5000) (inc. VAT)
5000
€ 3,300.00
€ 0.66 Each (On a Reel of 5000) (Exc. VAT)
€ 3,894.00
€ 0.779 Each (On a Reel of 5000) (inc. VAT)
5000
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Please check again later.
Quantity | Unit price | Per Reel |
---|---|---|
5000 - 5000 | € 0.66 | € 3,300.00 |
10000+ | € 0.60 | € 3,000.00 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
60 V
Package Type
TSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
3.1mm
Length
3.1mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.85mm