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N-Channel MOSFET, 5.5 A, 400 V, 3-Pin TO-220AB Vishay Siliconix IRF730APBF

RS Stock No.: 873-1119Brand: Vishay SiliconixManufacturers Part No.: IRF730APBF
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

400 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.52mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Width

4.7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

15.85mm

Country of Origin

China

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N-Channel MOSFET, 6 A, 400 V, 3-Pin TO-220AB Vishay SIHP6N40D-GE3
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P.O.A.

N-Channel MOSFET, 5.5 A, 400 V, 3-Pin TO-220AB Vishay Siliconix IRF730APBF

P.O.A.

N-Channel MOSFET, 5.5 A, 400 V, 3-Pin TO-220AB Vishay Siliconix IRF730APBF
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-Channel MOSFET, 6 A, 400 V, 3-Pin TO-220AB Vishay SIHP6N40D-GE3
€ 1.971Each (In a Pack of 5) (Exc. VAT)

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

400 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.52mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Width

4.7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

15.85mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-Channel MOSFET, 6 A, 400 V, 3-Pin TO-220AB Vishay SIHP6N40D-GE3
€ 1.971Each (In a Pack of 5) (Exc. VAT)