Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
186 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
6.22mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Country of Origin
Taiwan, Province Of China
€ 20.80
€ 2.08 Each (In a Pack of 10) (Exc. VAT)
€ 24.54
€ 2.454 Each (In a Pack of 10) (inc. VAT)
Standard
10
€ 20.80
€ 2.08 Each (In a Pack of 10) (Exc. VAT)
€ 24.54
€ 2.454 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | € 2.08 | € 20.80 |
| 100 - 490 | € 1.80 | € 18.00 |
| 500 - 990 | € 1.61 | € 16.10 |
| 1000+ | € 1.42 | € 14.20 |
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
186 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
6.22mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Country of Origin
Taiwan, Province Of China


