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Vishay Siliconix TrenchFET P-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK SQD40061EL_GE3

RS Stock No.: 178-3960Brand: Vishay SiliconixManufacturers Part No.: SQD40061EL_GE3
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

2.38mm

Length

6.73mm

Typical Gate Charge @ Vgs

185 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Height

6.22mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Country of Origin

Taiwan, Province Of China

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Stock information temporarily unavailable.

€ 21.40

€ 2.14 Each (In a Pack of 10) (Exc. VAT)

€ 25.25

€ 2.525 Each (In a Pack of 10) (inc. VAT)

Vishay Siliconix TrenchFET P-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK SQD40061EL_GE3
Select packaging type

€ 21.40

€ 2.14 Each (In a Pack of 10) (Exc. VAT)

€ 25.25

€ 2.525 Each (In a Pack of 10) (inc. VAT)

Vishay Siliconix TrenchFET P-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK SQD40061EL_GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
10 - 90€ 2.14€ 21.40
100 - 490€ 1.83€ 18.30
500 - 990€ 1.64€ 16.40
1000+€ 1.45€ 14.50

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

2.38mm

Length

6.73mm

Typical Gate Charge @ Vgs

185 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Height

6.22mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Country of Origin

Taiwan, Province Of China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more