Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
9.01mm
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
€ 2.20
Each (Supplied in a Tube) (Exc. Vat)
€ 2.596
Each (Supplied in a Tube) (Including VAT)
10
€ 2.20
Each (Supplied in a Tube) (Exc. Vat)
€ 2.596
Each (Supplied in a Tube) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
10 - 90 | € 2.20 | € 22.00 |
100 - 240 | € 1.67 | € 16.70 |
250 - 490 | € 1.40 | € 14.00 |
500 - 990 | € 1.25 | € 12.50 |
1000+ | € 0.92 | € 9.20 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
9.01mm
Product details