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Vishay N-Channel MOSFET, 9.8 A, 200 V, 3-Pin TO-220FP IRFI640GPBF

RS Stock No.: 542-9664PBrand: VishayManufacturers Part No.: IRFI640GPBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

9.8 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

70 nC @ 10 V

Height

9.8mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

€ 33.70

€ 3.37 Each (Supplied as a Tape) (Exc. VAT)

€ 39.77

€ 3.98 Each (Supplied as a Tape) (inc. VAT)

Vishay N-Channel MOSFET, 9.8 A, 200 V, 3-Pin TO-220FP IRFI640GPBF
Select packaging type

€ 33.70

€ 3.37 Each (Supplied as a Tape) (Exc. VAT)

€ 39.77

€ 3.98 Each (Supplied as a Tape) (inc. VAT)

Vishay N-Channel MOSFET, 9.8 A, 200 V, 3-Pin TO-220FP IRFI640GPBF
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit price
10 - 49€ 3.37
50 - 99€ 3.22
100 - 249€ 3.06
250+€ 2.90

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

9.8 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

70 nC @ 10 V

Height

9.8mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more