Vishay N-Channel MOSFET, 6.6 A, 500 V, 3-Pin TO-220FP IRFIB7N50APBF
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6.6 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
520 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
52 nC @ 10 V
Transistor Material
Si
Height
9.8mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 51.10
€ 5.11 Each (Supplied as a Tape) (Exc. VAT)
€ 60.30
€ 6.03 Each (Supplied as a Tape) (inc. VAT)
Production pack (Tape)
10
€ 51.10
€ 5.11 Each (Supplied as a Tape) (Exc. VAT)
€ 60.30
€ 6.03 Each (Supplied as a Tape) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tape)
10
Stock information temporarily unavailable.
| Quantity | Unit price |
|---|---|
| 10 - 49 | € 5.11 |
| 50 - 99 | € 4.95 |
| 100 - 249 | € 4.73 |
| 250+ | € 4.45 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6.6 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
520 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
52 nC @ 10 V
Transistor Material
Si
Height
9.8mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products