Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
50 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
9.4 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 224.00
€ 2.24 Each (Supplied on a Reel) (Exc. VAT)
€ 264.32
€ 2.643 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
€ 224.00
€ 2.24 Each (Supplied on a Reel) (Exc. VAT)
€ 264.32
€ 2.643 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
100
Stock information temporarily unavailable.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 100 - 240 | € 2.24 | € 22.40 |
| 250 - 490 | € 2.18 | € 21.80 |
| 500 - 990 | € 1.95 | € 19.50 |
| 1000+ | € 1.86 | € 18.60 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
50 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
9.4 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details


