Vishay P-Channel MOSFET, 3.1 A, 100 V, 3-Pin IPAK IRFU9110PBF
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
8.7 nC @ 10 V
Width
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Height
6.22mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 1.20
€ 1.20 Each (Exc. VAT)
€ 1.42
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| 250+ | € 0.88 |
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Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
8.7 nC @ 10 V
Width
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Height
6.22mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products