Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
30 V
Package Type
SC-89-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
244 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
236 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Width
1.2mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
4.43 nC @ 4.5 V
Length
1.7mm
Minimum Operating Temperature
-55 °C
Height
0.6mm
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 94.00
€ 0.47 Each (Supplied on a Reel) (Exc. VAT)
€ 110.92
€ 0.555 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
200
€ 94.00
€ 0.47 Each (Supplied on a Reel) (Exc. VAT)
€ 110.92
€ 0.555 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
200
Stock information temporarily unavailable.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 200 - 980 | € 0.47 | € 9.40 |
| 1000 - 1980 | € 0.44 | € 8.80 |
| 2000 - 4980 | € 0.41 | € 8.20 |
| 5000+ | € 0.41 | € 8.20 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
30 V
Package Type
SC-89-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
244 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
236 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Width
1.2mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
4.43 nC @ 4.5 V
Length
1.7mm
Minimum Operating Temperature
-55 °C
Height
0.6mm
Product details


