N-Channel MOSFET, 600 mA, 30 V, 3-Pin SOT-323 Vishay SI1302DL-T1-E3
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
480 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
280 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
0.86 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Transistor Material
Si
Width
1.35mm
Minimum Operating Temperature
-55 °C
Height
1mm
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stock information temporarily unavailable.
Please check again later.
€ 0.63
Each (Supplied on a Reel) (Exc. Vat)
€ 0.743
Each (Supplied on a Reel) (Including VAT)
10
€ 0.63
Each (Supplied on a Reel) (Exc. Vat)
€ 0.743
Each (Supplied on a Reel) (Including VAT)
10
Buy in bulk
| quantity | Unit price | Per Reel |
|---|---|---|
| 10 - 90 | € 0.63 | € 6.30 |
| 100 - 490 | € 0.48 | € 4.80 |
| 500 - 990 | € 0.45 | € 4.50 |
| 1000 - 2490 | € 0.36 | € 3.60 |
| 2500+ | € 0.30 | € 3.00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
480 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
280 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
0.86 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Transistor Material
Si
Width
1.35mm
Minimum Operating Temperature
-55 °C
Height
1mm
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products