Vishay P-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 SI2303CDS-T1-GE3
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.4mm
Length
3.04mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V, 4 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.02mm
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 1,320.00
€ 0.44 Each (On a Reel of 3000) (Exc. VAT)
€ 1,557.60
€ 0.519 Each (On a Reel of 3000) (inc. VAT)
3000
€ 1,320.00
€ 0.44 Each (On a Reel of 3000) (Exc. VAT)
€ 1,557.60
€ 0.519 Each (On a Reel of 3000) (inc. VAT)
3000
Stock information temporarily unavailable.
Please check again later.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.4mm
Length
3.04mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V, 4 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.02mm
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products