Vishay P-Channel MOSFET, 3.8 A, 60 V, 8-Pin SOIC SI9407BDY-T1-GE3
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4mm
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.55mm
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 2,375.00
€ 0.95 Each (On a Reel of 2500) (Exc. VAT)
€ 2,802.50
€ 1.121 Each (On a Reel of 2500) (inc. VAT)
2500
€ 2,375.00
€ 0.95 Each (On a Reel of 2500) (Exc. VAT)
€ 2,802.50
€ 1.121 Each (On a Reel of 2500) (inc. VAT)
2500
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Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4mm
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.55mm
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products