Vishay E Series Dual N-Channel MOSFET, 21 A, 850 V, 3-Pin TO-247AC SIHG24N80AE-GE3

RS Stock No.: 228-2870Brand: VishayManufacturers Part No.: SIHG24N80AE-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

850 V

Series

E Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.184 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

2

Transistor Material

Si

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€ 15.00

€ 7.50 Each (In a Pack of 2) (Exc. VAT)

€ 17.70

€ 8.85 Each (In a Pack of 2) (inc. VAT)

Vishay E Series Dual N-Channel MOSFET, 21 A, 850 V, 3-Pin TO-247AC SIHG24N80AE-GE3
Select packaging type

€ 15.00

€ 7.50 Each (In a Pack of 2) (Exc. VAT)

€ 17.70

€ 8.85 Each (In a Pack of 2) (inc. VAT)

Vishay E Series Dual N-Channel MOSFET, 21 A, 850 V, 3-Pin TO-247AC SIHG24N80AE-GE3

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

QuantityUnit pricePer Pack
2 - 18€ 7.50€ 15.00
20 - 48€ 7.22€ 14.44
50 - 98€ 6.94€ 13.88
100 - 198€ 6.68€ 13.36
200+€ 5.17€ 10.34

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

850 V

Series

E Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.184 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

2

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more