Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
80 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
69.5 nC @ 10 V
Width
5.26mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Minimum Operating Temperature
-55 °C
Height
1.12mm
Series
TrenchFET
Product details
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 3.69
Each (In a Pack of 2) (Exc. Vat)
€ 4.354
Each (In a Pack of 2) (Including VAT)
2
€ 3.69
Each (In a Pack of 2) (Exc. Vat)
€ 4.354
Each (In a Pack of 2) (Including VAT)
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 18 | € 3.69 | € 7.38 |
20 - 98 | € 3.51 | € 7.02 |
100 - 198 | € 3.22 | € 6.44 |
200 - 498 | € 3.07 | € 6.14 |
500+ | € 2.92 | € 5.84 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
80 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
69.5 nC @ 10 V
Width
5.26mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Minimum Operating Temperature
-55 °C
Height
1.12mm
Series
TrenchFET
Product details