Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.3mm
Typical Gate Charge @ Vgs
92 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.78mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 164.00
€ 0.82 Each (Supplied on a Reel) (Exc. VAT)
€ 193.52
€ 0.968 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
200
€ 164.00
€ 0.82 Each (Supplied on a Reel) (Exc. VAT)
€ 193.52
€ 0.968 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
200
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Reel |
---|---|---|
200 - 480 | € 0.82 | € 16.40 |
500 - 980 | € 0.76 | € 15.20 |
1000 - 1980 | € 0.63 | € 12.60 |
2000+ | € 0.54 | € 10.80 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.3mm
Typical Gate Charge @ Vgs
92 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.78mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details