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N-Channel MOSFET, 60 A, 61 A, 80 V, 8-Pin PowerPAIR 3 x 3FDC Vishay SiZ260DT-T1-GE3

RS Stock No.: 200-6875Brand: VishayManufacturers Part No.: SiZ260DT-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

60 A, 61 A

Maximum Drain Source Voltage

80 V

Package Type

PowerPAIR 3 x 3FDC

Pin Count

8

Maximum Drain Source Resistance

0.031 Ω, 0.031 Ω, 0.0245 Ω, 0.0247 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

1

Series

TrenchFET® Gen IV

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P.O.A.

N-Channel MOSFET, 60 A, 61 A, 80 V, 8-Pin PowerPAIR 3 x 3FDC Vishay SiZ260DT-T1-GE3

P.O.A.

N-Channel MOSFET, 60 A, 61 A, 80 V, 8-Pin PowerPAIR 3 x 3FDC Vishay SiZ260DT-T1-GE3
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

60 A, 61 A

Maximum Drain Source Voltage

80 V

Package Type

PowerPAIR 3 x 3FDC

Pin Count

8

Maximum Drain Source Resistance

0.031 Ω, 0.031 Ω, 0.0245 Ω, 0.0247 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

1

Series

TrenchFET® Gen IV

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more