IGBT Transistors

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Part Details Brand Maximum Continuous Collector Current Maximum Collector Emitter Voltage Maximum Gate Emitter Voltage Maximum Power Dissipation Number of Transistors Package Type Mounting Type Channel Type Pin Count Switching Speed Transistor Configuration Length Width Height Dimensions Energy Rating Gate Capacitance Maximum Operating Temperature Minimum Operating Temperature
STMicroelectronics STGW8M120DF3 IGBT, 16 A @ +25°C 1200 V, 3-Pin TO STMicroelectronics 16 A @ +25°C 1200 V ±20V 167 W 1 TO Through Hole N 3 1MHz Single 15.75mm 5.15mm 20.1mm 15.75 x 5.15 x 20.15mm 1.24mJ 542pF +175 °C -55 °C
STMicroelectronics STGWT15H60F IGBT, 30 A @ +25°C 600 V, 3-Pin TO STMicroelectronics 30 A @ +25°C 600 V ±20V 115 W 1 TO Through Hole N 3 1MHz Single 15.8mm 5mm 20.1mm 15.8 x 5 x 20.1mm 553µJ 1952pF +175 °C -55 °C
Infineon IHW40N120R3FKSA1 IGBT, 80 A 1200 V, 3-Pin TO-247 Infineon 80 A 1200 V ±20V 429 W 1 TO-247 Through Hole N 3 - Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 2.02mJ - +175 °C -40 °C
Infineon IHW40N120R3FKSA1 IGBT, 80 A 1200 V, 3-Pin TO-247 Infineon 80 A 1200 V ±20V 429 W 1 TO-247 Through Hole N 3 - Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 2.02mJ - +175 °C -40 °C
Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220 Infineon 41 A 600 V ±20V 166 W 1 TO-220 Through Hole N 3 - Single 10.36mm 4.57mm 15.95mm 10.36 x 4.57 x 15.95mm 0.77mJ - +175 °C -40 °C
Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220 Infineon 41 A 600 V ±20V 166 W 1 TO-220 Through Hole N 3 - Single 10.36mm 4.57mm 15.95mm 10.36 x 4.57 x 15.95mm 0.77mJ - +175 °C -40 °C
ROHM RGT16NS65DGC9 P-Channel IGBT, 16 A 650 (Minimum) V, 3+Tab-Pin I2PAK
  • RS Stock No. 171-5506
  • Brand ROHM
  • Mfr. Part No. RGT16NS65DGC9
ROHM 16 A 650 (Minimum) V 30V 94 W 1 TO-262 Through Hole P 3+Tab - Single 10.1mm 4.5mm 9mm 10.1 x 4.5 x 9mm - 450pF +175 °C -40 °C
ROHM RGT16NS65DGC9 P-Channel IGBT, 16 A 650 (Minimum) V, 3+Tab-Pin I2PAK
  • € 1.31
  • Each (On a Reel of 1000)
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  • RS Stock No. 171-5345
  • Brand ROHM
  • Mfr. Part No. RGT16NS65DGC9
ROHM 16 A 650 (Minimum) V 30V 94 W 1 TO-262 Through Hole P 3+Tab - Single 10.1mm 4.5mm 9mm 10.1 x 4.5 x 9mm - 450pF +175 °C -40 °C
ROHM RGT30NS65DGC9 P-Channel IGBT, 30 A 650 (Minimum) V, 3+Tab-Pin I2PAK
  • € 1.58
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  • RS Stock No. 171-5347
  • Brand ROHM
  • Mfr. Part No. RGT30NS65DGC9
ROHM 30 A 650 (Minimum) V 30V 133 W 1 TO-262 Through Hole P 3+Tab - Single 10.1mm 4.5mm 9mm 10.1 x 4.5 x 9mm - 780pF +175 °C -40 °C
ROHM RGT30NS65DGC9 P-Channel IGBT, 30 A 650 (Minimum) V, 3+Tab-Pin I2PAK
  • RS Stock No. 171-5593
  • Brand ROHM
  • Mfr. Part No. RGT30NS65DGC9
ROHM 30 A 650 (Minimum) V 30V 133 W 1 TO-262 Through Hole P 3+Tab - Single 10.1mm 4.5mm 9mm 10.1 x 4.5 x 9mm - 780pF +175 °C -40 °C
ROHM RGT40NS65DGC9 P-Channel IGBT, 40 A 650 (Minimum) V, 3+Tab-Pin I2PAK
  • € 1.85
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  • RS Stock No. 171-5349
  • Brand ROHM
  • Mfr. Part No. RGT40NS65DGC9
ROHM 40 A 650 (Minimum) V 30V 161 W 1 TO-262 Through Hole P 3+Tab - Single 10.1mm 4.5mm 9mm 10.1 x 4.5 x 9mm - 1070pF +175 °C -40 °C
ROHM RGT40NS65DGC9 P-Channel IGBT, 40 A 650 (Minimum) V, 3+Tab-Pin I2PAK
  • RS Stock No. 171-5627
  • Brand ROHM
  • Mfr. Part No. RGT40NS65DGC9
ROHM 40 A 650 (Minimum) V 30V 161 W 1 TO-262 Through Hole P 3+Tab - Single 10.1mm 4.5mm 9mm 10.1 x 4.5 x 9mm - 1070pF +175 °C -40 °C
STMicroelectronics STGW8M120DF3 IGBT, 16 A @ +25°C 1200 V, 3-Pin TO STMicroelectronics 16 A @ +25°C 1200 V ±20V 167 W 1 TO Through Hole N 3 1MHz Single 15.75mm 5.15mm 20.1mm 15.75 x 5.15 x 20.15mm 1.24mJ 542pF +175 °C -55 °C
STMicroelectronics STGWT15H60F IGBT, 30 A @ +25°C 600 V, 3-Pin TO STMicroelectronics 30 A @ +25°C 600 V ±20V 115 W 1 TO Through Hole N 3 1MHz Single 15.8mm 5mm 20.1mm 15.8 x 5 x 20.1mm 553µJ 1952pF +175 °C -55 °C
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