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TN2106K1-G N-Channel MOSFET, 280 mA, 60 (Minimum) V TN2106, 3-Pin SOT-23 Microchip Technology
  • Maximum Operating Temperature +150 °C
  • Maximum Continuous Drain Current 280 mA
  • Package Type TO-236AB
  • Maximum Power Dissipation 360 mW
  • Mounting Type Surface Mount
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TN2540N8-G N-Channel MOSFET, 260 mA, 400 (Minimum) V TN2540, 3-Pin TO-243AA Microchip Technology
  • Maximum Operating Temperature +150 °C
  • Maximum Continuous Drain Current 260 mA
  • Package Type TO-243AA
  • Maximum Power Dissipation 1.6 W
  • Mounting Type Surface Mount
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VP2450N8-G P-Channel MOSFET, 160 mA, 500 (Minimum) V VP2450, 3-Pin SOT-89 Microchip Technology
  • Maximum Operating Temperature +150 °C
  • Maximum Continuous Drain Current 160 mA
  • Package Type SOT-89
  • Maximum Power Dissipation 1.6 W
  • Mounting Type Surface Mount
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2N7000-G N-Channel MOSFET, 200 mA, 60 (Minimum) V 2N7000, 3-Pin TO-92 Microchip Technology
  • Maximum Operating Temperature +150 °C
  • Maximum Continuous Drain Current 200 mA
  • Package Type TO-92
  • Maximum Power Dissipation 1 W
  • Mounting Type Through Hole
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