N-Channel MOSFET, 100 A, 25 V, 8-Pin TSDSON Infineon BSC009NE2LSATMA1

RS Stock No.: 178-7504Brand: InfineonManufacturers Part No.: BSC009NE2LSATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Series

OptiMOS

Package Type

TSDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

900 μΩ

Channel Mode

Enhancement

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.35mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

72 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.1mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Product details

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 1.70

Each (On a Reel of 5000) (Exc. Vat)

€ 2.006

Each (On a Reel of 5000) (Including VAT)

N-Channel MOSFET, 100 A, 25 V, 8-Pin TSDSON Infineon BSC009NE2LSATMA1

5000

Available in multiples of 5000
5000€ 8,500.00
10000€ 17,000.00
15000€ 25,500.00
20000€ 34,000.00
25000€ 42,500.00
30000€ 51,000.00
35000€ 59,500.00
40000€ 68,000.00
45000€ 76,500.00
50000€ 85,000.00
55000€ 93,500.00
60000€ 102,000.00
65000€ 110,500.00
70000€ 119,000.00
75000€ 127,500.00

€ 1.70

Each (On a Reel of 5000) (Exc. Vat)

€ 2.006

Each (On a Reel of 5000) (Including VAT)

N-Channel MOSFET, 100 A, 25 V, 8-Pin TSDSON Infineon BSC009NE2LSATMA1
Stock information temporarily unavailable.

5000

Available in multiples of 5000
5000€ 8,500.00
10000€ 17,000.00
15000€ 25,500.00
20000€ 34,000.00
25000€ 42,500.00
30000€ 51,000.00
35000€ 59,500.00
40000€ 68,000.00
45000€ 76,500.00
50000€ 85,000.00
55000€ 93,500.00
60000€ 102,000.00
65000€ 110,500.00
70000€ 119,000.00
75000€ 127,500.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Series

OptiMOS

Package Type

TSDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

900 μΩ

Channel Mode

Enhancement

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.35mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

72 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.1mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Product details

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more