Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
30 V
Series
OptiMOS
Package Type
PQFN 3 x 3
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.0095 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Number of Elements per Chip
2
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Stock information temporarily unavailable.
P.O.A.
Dual N-Channel MOSFET Transistor & Diode, 25 A, 30 V, 8-Pin PQFN 3 x 3 Infineon BSZ0910NDXTMA1
5000
P.O.A.
Dual N-Channel MOSFET Transistor & Diode, 25 A, 30 V, 8-Pin PQFN 3 x 3 Infineon BSZ0910NDXTMA1
Stock information temporarily unavailable.
5000
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
30 V
Series
OptiMOS
Package Type
PQFN 3 x 3
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.0095 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Number of Elements per Chip
2