Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-7 A
Maximum Collector Emitter Voltage
-50 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.28 x 4.82 x 15.75mm
Maximum Operating Temperature
+150 °C
Product details
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
50
P.O.A.
50
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-7 A
Maximum Collector Emitter Voltage
-50 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.28 x 4.82 x 15.75mm
Maximum Operating Temperature
+150 °C
Product details
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.