Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
39 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.63mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Height
16.12mm
Minimum Operating Temperature
-55 °C
Country of Origin
Korea, Republic Of
Product details
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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P.O.A.
50
P.O.A.
50
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
39 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.63mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Height
16.12mm
Minimum Operating Temperature
-55 °C
Country of Origin
Korea, Republic Of
Product details