Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Number of Elements per Chip
2
Length
5mm
Transistor Material
Si
Typical Gate Charge @ Vgs
41.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 126.00
€ 1.26 Each (Supplied on a Reel) (Exc. VAT)
€ 148.68
€ 1.487 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
€ 126.00
€ 1.26 Each (Supplied on a Reel) (Exc. VAT)
€ 148.68
€ 1.487 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
100
Stock information temporarily unavailable.
Quantity | Unit price | Per Reel |
---|---|---|
100 - 180 | € 1.26 | € 25.20 |
200 - 480 | € 1.10 | € 22.00 |
500 - 980 | € 1.04 | € 20.80 |
1000+ | € 1.01 | € 20.20 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Number of Elements per Chip
2
Length
5mm
Transistor Material
Si
Typical Gate Charge @ Vgs
41.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details