Rectifier Diodes & Schottky Diodes

What is a Rectifier Diode?
A rectifier diode main purpose is to rectify alternating currents. It's used to flow a current through a circuit in one direction, in contrast to elements such as resistors a rectifiers current has a non-linear relationship to the voltage across it. The diode will be forward bias when positive voltage is being applied and will do its best to operate as a short circuit and allow the current to flow through the diode freely. Its main task is to convert an alternating current (AC) into a direct current (DC) through the application of rectifier bridges. A rectifier diode can sometimes be used as a Schottky Rectifier.

What is a Schottky Diode?
A Schottky Diode is sometimes referred to as a Barrier Diode or a Hot Carrier Diode. The Schottky is a single type of electronic component which is a semiconductor. It has fast switching action with an accompanying low forward voltage drop, when current flows through the diode, a small voltage drop happens across the diode terminals.
A standard diode has a voltage drop between 0.6 and 1.7 volts whereas a Schottkys drop is between 0.15 and 0.45 volts. This lower voltage drop facilitates a high switching speed as well as improved system efficiency.

What are Schottky Diodes used for?
• They are used for the voltage clamping of applications, also as a preventative of transistor saturation. This is because they have a high current density,
• They can be used as rectifiers (in power supplies.
• A good element to use in applications that are sensitive and efficiency
• To prevent batteries from discharging
• Solar panels and grid connected systems

Why should I use a Schottky?
• They feature a low turn voltage between 0.15 and 0.45 volts
• A fast recovery time, resulting in a small amount of stored charge that can then be used for high speed switches.
• The low junction capacitance occupies a small space, after the results given from the wire point contact the silicon, the capacitance levels are also very small.
• Higher efficiency
• Integrated guard ring for stress protection
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Part Details Brand Maximum Continuous Forward Current Diode Configuration Maximum Forward Current Rectifier Type Number of Elements per Chip Peak Reverse Repetitive Voltage Maximum Reverse Voltage Mounting Type Package Type Diode Type Diode Technology Pin Count Maximum Forward Voltage Drop Length Width Height Peak Reverse Recovery Time Diameter Dimensions Peak Non-Repetitive Forward Surge Current Peak Reverse Current Power Dissipation Recovery Time Maximum Operating Temperature Minimum Operating Temperature
ON Semi 200V 8A, Dual Diode, 8-Pin DFN NRVHP820MFDWFT1G
  • € 0.65
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ON Semiconductor 8A - - - 2 200V - Surface Mount DFN - - 8 - 5.1mm 6.1mm 1.05mm 50ns - 5.1 x 6.1 x 1.05mm 80A 35µA - - +175 °C -55 °C
ON Semi 1200V 22.5A, Diode, 3-Pin DPAK FFSD08120A
  • € 5.48
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ON Semiconductor 22.5A Single - - 1 1200V - Surface Mount TO-252 SiC Schottky Schottky 3 - 6.73mm 6.22mm 2.39mm - - 6.73 x 6.22 x 2.39mm 530A 400µA 263W - +175 °C -55 °C
ON Semi 650V 18A, Diode, 3-Pin DPAK FFSD1065A
  • € 3.75
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ON Semiconductor 18A Single - - 1 650V - Surface Mount TO-252 SiC Schottky Schottky 3 - 6.73mm 6.22mm 2.39mm - - 6.73 x 6.22 x 2.39mm 760A 600µA 150W - +175 °C -55 °C
ON Semi 200V 8A, Dual Diode, 8-Pin DFN NRVHP8H200MFDWFT1G
  • € 0.80
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ON Semiconductor 8A - - - 2 200V - Surface Mount DFN - - 8 - 5.1mm 6.1mm 1.05mm 50ns - 5.1 x 6.1 x 1.05mm 80A - - - +175 °C -55 °C
ON Semi 1200V 17A, Diode, 2-Pin TO-247 FFSH10120A-F085 ON Semiconductor 17A Single - - 1 1200V - Through Hole TO-247 SiC Schottky Schottky 2 - 15.87mm 4.82mm 20.82mm - - 15.87 x 4.82 x 20.82mm 850A 400µA 193W - +175 °C -55 °C
ON Semi 1200V 22.5A, Diode, 3-Pin DPAK FFSD08120A ON Semiconductor 22.5A Single - - 1 1200V - Surface Mount TO-252 SiC Schottky Schottky 3 - 6.73mm 6.22mm 2.39mm - - 6.73 x 6.22 x 2.39mm 530A 400µA 263W - +175 °C -55 °C
ON Semi 1200V 26A, Diode, 2-Pin TO-247 FFSH15120A ON Semiconductor 26A Single - - 1 1200V - Through Hole TO-247 SiC Schottky Schottky 2 - 15.87mm 4.82mm 20.82mm - - 15.87 x 4.82 x 20.82mm 920A 400µA 283W - +175 °C -55 °C
ON Semi 1200V 30A, Diode, 2-Pin TO-247 FFSH20120A-F085 ON Semiconductor 30A Single - - 1 1200V - Through Hole TO-247 SiC Schottky Schottky 2 - 15.87mm 4.82mm 20.82mm - - 15.87 x 4.82 x 20.82mm 1.19kA 400µA 273W - +175 °C -55 °C
ON Semi 1200V 46A, Diode, 2-Pin TO-247 FFSH30120A ON Semiconductor 46A Single - - 1 1200V - Through Hole TO-247 SiC Schottky Schottky 2 - 15.87mm 4.82mm 20.82mm - - 15.87 x 4.82 x 20.82mm 1.5kA 400µA 500W - +175 °C -55 °C
ON Semi 1200V 50A, Diode, 3-Pin TO-247 FFSH40120ADN-F085 ON Semiconductor 50A Dual Common Anode - - 1 1200V - Through Hole TO-247 SiC Schottky Schottky 3 - 15.87mm 4.82mm 20.82mm - - 15.87 x 4.82 x 20.82mm 1.19kA 400µA 220W - +175 °C -55 °C
ON Semi 1200V 77A, Diode, 2-Pin TO-247 FFSH50120A ON Semiconductor 77A Single - - 1 1200V - Through Hole TO-247 SiC Schottky Schottky 2 - 15.87mm 4.82mm 20.82mm - - 15.87 x 4.82 x 20.82mm 1.7kA 400µA 736W - +175 °C -55 °C
ON Semi 200V 4A, Dual Diode, 8-Pin DFN NRVHP420MFDWFT1G ON Semiconductor 4A - - - 2 200V - Surface Mount DFN - - 8 - 5.1mm 6.1mm 1.05mm 40ns - 5.1 x 6.1 x 1.05mm 40A - - - +175 °C -55 °C
ON Semi 200V 4A, Dual Diode, 8-Pin DFN NRVHP420MFDWFT1G
  • € 0.39
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ON Semiconductor 4A - - - 2 200V - Surface Mount DFN - - 8 - 5.1mm 6.1mm 1.05mm 40ns - 5.1 x 6.1 x 1.05mm 40A - - - +175 °C -55 °C
ON Semi 200V 8A, Dual Diode, 8-Pin DFN NRVHP820MFDWFT1G ON Semiconductor 8A - - - 2 200V - Surface Mount DFN - - 8 - 5.1mm 6.1mm 1.05mm 50ns - 5.1 x 6.1 x 1.05mm 80A 35µA - - +175 °C -55 °C
ON Semi 200V 8A, Dual Diode, 8-Pin DFN NRVHP8H200MFDWFT1G ON Semiconductor 8A - - - 2 200V - Surface Mount DFN - - 8 - 5.1mm 6.1mm 1.05mm 50ns - 5.1 x 6.1 x 1.05mm 80A - - - +175 °C -55 °C
ON Semi 2V 50mA, Diode, 2-Pin X2DFN NSR201MXT5G
  • € 0.27
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ON Semiconductor 50mA Single - - 1 2V - Surface Mount X2DFN Schottky Schottky 2 - 1.05mm 0.65mm 0.35mm - - 1.05 x 0.65 x 0.35mm - - - - +150 °C -55 °C
ON Semi 2V 50mA, Diode, 2-Pin X2DFN NSR201MXT5G ON Semiconductor 50mA Single - - 1 2V - Surface Mount X2DFN Schottky Schottky 2 - 1.05mm 0.65mm 0.35mm - - 1.05 x 0.65 x 0.35mm - - - - +150 °C -55 °C
ON Semi 650V 10A, Diode, 2-Pin TO-220F FFSPF1065A ON Semiconductor 10A Single - - 1 650V - Through Hole TO-220F SiC Schottky Schottky 2 - 10.16mm 4.7mm 15.87mm - - 10.16 x 4.7 x 15.87mm 720A 600µA 38W - +175 °C -55 °C
ON Semi 650V 18A, Diode, 3-Pin DPAK FFSD1065A ON Semiconductor 18A Single - - 1 650V - Surface Mount TO-252 SiC Schottky Schottky 3 - 6.73mm 6.22mm 2.39mm - - 6.73 x 6.22 x 2.39mm 760A 600µA 150W - +175 °C -55 °C
ON Semi 650V 20A, Diode, 2-Pin TO-220F FFSPF2065A ON Semiconductor 20A Single - - 1 650V - Through Hole TO-220F SiC Schottky Schottky 2 - 10.16mm 4.7mm 15.87mm - - 10.16 x 4.7 x 15.87mm 1.1kA 600µA 49W - +175 °C -55 °C
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