Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
50 W
Number of Transistors
1
Package Type
TO-220FP
Pin Count
3
Country of Origin
China
Product Details
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
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Stock information temporarily unavailable.
P.O.A.
Each (In a Pack of 5) (Exc. VAT)
Standard
5
P.O.A.
Each (In a Pack of 5) (Exc. VAT)
Stock information temporarily unavailable.
Standard
5
Ideate. Create. Collaborate
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Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
50 W
Number of Transistors
1
Package Type
TO-220FP
Pin Count
3
Country of Origin
China
Product Details
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
