Technical Documents
Specifications
Brand
MicrochipProduct Type
Parallel EEPROM
Memory Size
64kB
Interface Type
Parallel
Package Type
PLCC
Mount Type
Surface
Pin Count
32
Organisation
8K x 8 bit
Maximum Clock Frequency
5MHz
Minimum Supply Voltage
4.5V
Maximum Supply Voltage
5.5V
Number of Bits per Word
8
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
85°C
Width
15mm
Series
AT28HC64B
Length
12.5mm
Standards/Approvals
No
Automotive Standard
No
Number of Words
8192
Data Retention
10year
Supply Current
40mA
Maximum Random Access Time
70ns
Product Details
The Microchip AT28HC64B is a high-performance 64Kbit Parallel EEPROM offering access times to 55ns with power dissipation of 220mW. Deselected, CMOS standby current is less than 100μA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.
Stock information temporarily unavailable.
€ 399.36
€ 12.48 Each (In a Tube of 32) (Exc. VAT)
€ 471.24
€ 14.726 Each (In a Tube of 32) (inc. VAT)
32
€ 399.36
€ 12.48 Each (In a Tube of 32) (Exc. VAT)
€ 471.24
€ 14.726 Each (In a Tube of 32) (inc. VAT)
Stock information temporarily unavailable.
32
Technical Documents
Specifications
Brand
MicrochipProduct Type
Parallel EEPROM
Memory Size
64kB
Interface Type
Parallel
Package Type
PLCC
Mount Type
Surface
Pin Count
32
Organisation
8K x 8 bit
Maximum Clock Frequency
5MHz
Minimum Supply Voltage
4.5V
Maximum Supply Voltage
5.5V
Number of Bits per Word
8
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
85°C
Width
15mm
Series
AT28HC64B
Length
12.5mm
Standards/Approvals
No
Automotive Standard
No
Number of Words
8192
Data Retention
10year
Supply Current
40mA
Maximum Random Access Time
70ns
Product Details
The Microchip AT28HC64B is a high-performance 64Kbit Parallel EEPROM offering access times to 55ns with power dissipation of 220mW. Deselected, CMOS standby current is less than 100μA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Optional Software Data Protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.