Technical Documents
Specifications
Brand
MicrochipProduct Type
MOSFET Modules
Channel Type
N
Maximum Continuous Drain Current Id
236A
Maximum Drain Source Voltage Vds
1200V
Package Type
Module
Series
MSCSMC
Mount Type
Direct
Pin Count
33
Maximum Drain Source Resistance Rds
8.5mΩ
Channel Mode
Enhancement Mode
Maximum Power Dissipation Pd
604W
Minimum Operating Temperature
-40°C
Typical Gate Charge Qg @ Vgs
726nC
Maximum Gate Source Voltage Vgs
21V
Forward Voltage Vf
4.7V
Maximum Operating Temperature
175°C
Height
16.4mm
Length
56.7mm
Width
62.8mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The Microchip Advanced silicon carbide power module delivers exceptional performance in high-efficiency applications, particularly in demanding environments requiring robust power management and thermal capabilities.
Stock information temporarily unavailable.
€ 297.94
€ 297.94 Each (Exc. VAT)
€ 351.57
€ 351.57 Each (inc. VAT)
1
€ 297.94
€ 297.94 Each (Exc. VAT)
€ 351.57
€ 351.57 Each (inc. VAT)
Stock information temporarily unavailable.
1
Technical Documents
Specifications
Brand
MicrochipProduct Type
MOSFET Modules
Channel Type
N
Maximum Continuous Drain Current Id
236A
Maximum Drain Source Voltage Vds
1200V
Package Type
Module
Series
MSCSMC
Mount Type
Direct
Pin Count
33
Maximum Drain Source Resistance Rds
8.5mΩ
Channel Mode
Enhancement Mode
Maximum Power Dissipation Pd
604W
Minimum Operating Temperature
-40°C
Typical Gate Charge Qg @ Vgs
726nC
Maximum Gate Source Voltage Vgs
21V
Forward Voltage Vf
4.7V
Maximum Operating Temperature
175°C
Height
16.4mm
Length
56.7mm
Width
62.8mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The Microchip Advanced silicon carbide power module delivers exceptional performance in high-efficiency applications, particularly in demanding environments requiring robust power management and thermal capabilities.