Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7A
Maximum Drain Source Voltage Vds
65V
Series
PD5
Package Type
PowerSO-10RF
Mount Type
Surface
Pin Count
10
Maximum Drain Source Resistance Rds
0.76Ω
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
20V
Maximum Power Dissipation Pd
79W
Minimum Operating Temperature
65°C
Maximum Operating Temperature
165°C
Standards/Approvals
ECOPACK, JEDEC-approved, J-STD-020B, RoHS
Width
9.6mm
Length
14.35mm
Height
3.6mm
Automotive Standard
No
Country of Origin
Malaysia
Product Details
The STMicroelectronics RF power transistor is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Devices superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).
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€ 112.58
€ 112.58 Each (Exc. VAT)
€ 132.84
€ 132.84 Each (inc. VAT)
Stock information temporarily unavailable.
1
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Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7A
Maximum Drain Source Voltage Vds
65V
Series
PD5
Package Type
PowerSO-10RF
Mount Type
Surface
Pin Count
10
Maximum Drain Source Resistance Rds
0.76Ω
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
20V
Maximum Power Dissipation Pd
79W
Minimum Operating Temperature
65°C
Maximum Operating Temperature
165°C
Standards/Approvals
ECOPACK, JEDEC-approved, J-STD-020B, RoHS
Width
9.6mm
Length
14.35mm
Height
3.6mm
Automotive Standard
No
Country of Origin
Malaysia
Product Details
The STMicroelectronics RF power transistor is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Devices superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).
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