STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247 SCT30N120

RS Stock No.: 907-4741Brand: STMicroelectronicsManufacturers Part No.: SCT30N120
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

105nC

Maximum Power Dissipation Pd

270W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

3.5V

Maximum Operating Temperature

200°C

Length

15.75mm

Height

20.15mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics

Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

€ 25.98

€ 25.98 Each (Exc. VAT)

€ 30.66

€ 30.66 Each (inc. VAT)

STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247 SCT30N120
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1€ 25.98
2€ 51.96
3€ 77.94
4€ 103.92
5€ 129.90
6€ 155.88
7€ 181.86
8€ 207.84
9€ 233.82
10€ 259.80
11€ 285.78
12€ 311.76
13€ 337.74
14€ 363.72
15€ 389.70

€ 25.98

€ 25.98 Each (Exc. VAT)

€ 30.66

€ 30.66 Each (inc. VAT)

STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247 SCT30N120

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1€ 25.98
2€ 51.96
3€ 77.94
4€ 103.92
5€ 129.90
6€ 155.88
7€ 181.86
8€ 207.84
9€ 233.82
10€ 259.80
11€ 285.78
12€ 311.76
13€ 337.74
14€ 363.72
15€ 389.70

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

105nC

Maximum Power Dissipation Pd

270W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

3.5V

Maximum Operating Temperature

200°C

Length

15.75mm

Height

20.15mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics

Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more