Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Series
SCT
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.4V
Maximum Power Dissipation Pd
290W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
63nC
Maximum Operating Temperature
200°C
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Height
34.95mm
Automotive Standard
No
Product Details
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Stock information temporarily unavailable.
€ 36.16
€ 36.16 Each (Exc. VAT)
€ 42.67
€ 42.67 Each (inc. VAT)
Standard
1
€ 36.16
€ 36.16 Each (Exc. VAT)
€ 42.67
€ 42.67 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Series
SCT
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Maximum Gate Source Voltage Vgs
22V
Forward Voltage Vf
3.4V
Maximum Power Dissipation Pd
290W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
63nC
Maximum Operating Temperature
200°C
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Height
34.95mm
Automotive Standard
No
Product Details
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.