STMicroelectronics STripFET II N-Channel MOSFET, 25 A, 100 V, 3-Pin DPAK STD25NF10LT4

RS Stock No.: 687-5068Brand: STMicroelectronicsManufacturers Part No.: STD25NF10LT4
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

100 V

Series

STripFET II

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Typical Gate Charge @ Vgs

38 nC @ 5 V

Width

6.2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Maximum Operating Temperature

+175 °C

Height

2.4mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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€ 16.10

€ 3.22 Each (In a Pack of 5) (Exc. VAT)

€ 19.00

€ 3.80 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 25 A, 100 V, 3-Pin DPAK STD25NF10LT4
Select packaging type

€ 16.10

€ 3.22 Each (In a Pack of 5) (Exc. VAT)

€ 19.00

€ 3.80 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 25 A, 100 V, 3-Pin DPAK STD25NF10LT4

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

QuantityUnit pricePer Pack
5 - 5€ 3.22€ 16.10
10 - 20€ 2.77€ 13.85
25 - 95€ 2.71€ 13.55
100 - 495€ 2.21€ 11.05
500+€ 2.05€ 10.25

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

100 V

Series

STripFET II

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Typical Gate Charge @ Vgs

38 nC @ 5 V

Width

6.2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Maximum Operating Temperature

+175 °C

Height

2.4mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more